Gang Chen and Iain D. Boyd
Department of Mechanical and Aerospace Engineering
Cornell University, Ithaca, NY 14853 USA
Deposition of silicon thin films through
seeding of disilane molecules in a
supersonic beam of molecular hydrogen is modeled using the direct
simulation Monte Carlo technique. In this process, a collimated
beam is formed by rapid expansion through a nozzle orifice
and then refined through a skimmer.
Results are presented for a representative system configuration.
Detailed information is provided by the
simulations on the properties of the disilane molecules as they
impact on the substrate surface. Velocity slip and temperature slip
are discussed in this nonequilibrium flow. Comparison
of the numerical results with available experimental data are presented.
The efficiency of the beam flux at different flow rates
and nozzle temperatures is also studied.
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Beams for Thin Film Deposition
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